material

In2O3
ID:

mp-22323
DOI:

10.17188/1197555

Tags: Diindium trioxide Indium oxide

Material Details

Final Magnetic Moment
0.001 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
NM
Formation Energy / Atom
-1.977 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.029 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
6.94 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
In2O3
Band Gap
0.959 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
R3c [167]
Hall
-R 3 2"c
Point Group
3m
Crystal System
trigonal

Electronic Structure

Topological data for ICSD ID 16086 from Topological Materials Database
Topological Classification
trivial*
Subclassification
LCEBR†
* trivial insulator or metal
† Linear Combination of Elementary Band Representations

Band Structure and Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

Vibrational Properties

Reference for phonon calculations and visualization: Visualize with phononwebsite

Phonon dispersion

Density of States
Warning! These calculations were performed using a PBEsol exchange correlation functional in the framework of DFPT using the Abinit code. Please see the wiki for more info.

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

X-Ray Absorption Spectra

FEFF XANES

Select an element to display a spectrum averaged over all sites of that element in the structure.

Apply Gaussian smoothing:

0 eV
3 eV
FWHM: 0 eV

Download spectra for every symmetrically equivalent absorption site in the structure.

Download FEFF Input parameters.

Warning: These results are intended to be semi-quantitative in that corrections, such as edge shifts and Debye-Waller damping, have not been included.

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
LaAlO3 (mp-2920) <0 0 1> <0 0 1> 323.9
AlN (mp-661) <0 0 1> <0 0 1> 108.0
AlN (mp-661) <1 0 1> <0 0 1> 323.9
AlN (mp-661) <1 1 0> <1 0 0> 82.4
AlN (mp-661) <1 1 1> <1 0 1> 86.7
CeO2 (mp-20194) <1 0 0> <0 0 1> 215.9
CeO2 (mp-20194) <1 1 0> <0 0 1> 215.9
GaAs (mp-2534) <1 0 0> <0 0 1> 162.0
GaAs (mp-2534) <1 1 0> <0 0 1> 323.9
GaAs (mp-2534) <1 1 1> <0 0 1> 242.9
GaN (mp-804) <0 0 1> <0 0 1> 27.0
GaN (mp-804) <1 1 0> <0 0 1> 269.9
GaN (mp-804) <1 1 1> <0 0 1> 215.9
SiO2 (mp-6930) <0 0 1> <0 0 1> 189.0
SiO2 (mp-6930) <1 0 0> <1 0 0> 82.4
SiO2 (mp-6930) <1 1 0> <1 0 0> 247.2
DyScO3 (mp-31120) <0 0 1> <0 0 1> 162.0
DyScO3 (mp-31120) <0 1 0> <0 0 1> 350.9
DyScO3 (mp-31120) <0 1 1> <0 0 1> 54.0
DyScO3 (mp-31120) <1 0 1> <0 0 1> 54.0
InAs (mp-20305) <1 1 1> <0 0 1> 189.0
ZnSe (mp-1190) <1 0 0> <0 0 1> 162.0
ZnSe (mp-1190) <1 1 0> <0 0 1> 323.9
KTaO3 (mp-3614) <1 0 0> <0 0 1> 81.0
KTaO3 (mp-3614) <1 1 0> <0 0 1> 162.0
KTaO3 (mp-3614) <1 1 1> <0 0 1> 27.0
CdS (mp-672) <0 0 1> <0 0 1> 108.0
CdS (mp-672) <1 0 1> <1 0 1> 260.1
LiF (mp-1138) <1 0 0> <0 0 1> 296.9
LiF (mp-1138) <1 1 1> <0 0 1> 350.9
YVO4 (mp-19133) <1 0 0> <0 0 1> 189.0
YVO4 (mp-19133) <1 0 1> <1 1 0> 142.7
Te2Mo (mp-602) <0 0 1> <0 0 1> 350.9
Ag (mp-124) <1 1 1> <0 0 1> 350.9
Bi2Te3 (mp-34202) <0 0 1> <0 0 1> 323.9
GaSe (mp-1943) <0 0 1> <0 0 1> 242.9
BN (mp-984) <0 0 1> <0 0 1> 296.9
BN (mp-984) <1 0 0> <0 0 1> 350.9
LiNbO3 (mp-3731) <0 0 1> <0 0 1> 323.9
Bi2Se3 (mp-541837) <0 0 1> <0 0 1> 108.0
MoS2 (mp-1434) <0 0 1> <0 0 1> 27.0
Al (mp-134) <1 0 0> <0 0 1> 81.0
Al (mp-134) <1 1 0> <0 0 1> 162.0
Al (mp-134) <1 1 1> <0 0 1> 27.0
LiGaO2 (mp-5854) <1 0 0> <0 0 1> 108.0
LiGaO2 (mp-5854) <1 0 1> <0 0 1> 323.9
LiGaO2 (mp-5854) <1 1 0> <0 0 1> 189.0
TeO2 (mp-2125) <0 0 1> <0 0 1> 162.0
SiC (mp-7631) <0 0 1> <0 0 1> 108.0
LiTaO3 (mp-3666) <0 0 1> <0 0 1> 323.9
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
257 132 99 8 0 0
132 257 99 -8 0 0
99 99 203 0 0 0
8 -8 0 57 0 0
0 0 0 0 57 8
0 0 0 0 8 62
Compliance Tensor Sij (10-12Pa-1)
5.8 -2.4 -1.7 -1.2 0 0
-2.4 5.8 -1.7 1.2 0 0
-1.7 -1.7 6.6 0 0 0
-1.2 1.2 0 18 0 0
0 0 0 0 18 -2.3
0 0 0 0 -2.3 16.3
Shear Modulus GV
61 GPa
Bulk Modulus KV
153 GPa
Shear Modulus GR
59 GPa
Bulk Modulus KR
149 GPa
Shear Modulus GVRH
60 GPa
Bulk Modulus KVRH
151 GPa
Elastic Anisotropy
0.15
Poisson's Ratio
0.32

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
ZnSnS3 (mp-1093994) 0.1418 0.169 3
LiMgH3 (mp-23736) 0.1921 0.009 3
ZrCoO3 (mp-761293) 0.1444 0.097 3
NiSnO3 (mp-770398) 0.1719 0.026 3
Zr2N2O (mp-776239) 0.1828 0.099 3
Li3Nb4NiO12 (mp-772009) 0.3961 0.089 4
Li3Nb4FeO12 (mp-771984) 0.4037 0.030 4
Mg2VWO6 (mvc-5881) 0.3667 0.018 4
Mg2TiWO6 (mvc-5939) 0.3949 0.128 4
InNi2SbO6 (mp-1078367) 0.3134 0.000 4
In2S3 (mp-22375) 0.1234 0.023 2
Sc2O3 (mp-755313) 0.0809 0.039 2
Yb3N2 (mp-864675) 0.1238 0.000 2
Y2O3 (mp-754759) 0.0645 0.051 2
Ga2O3 (mp-1243) 0.1319 0.030 2
Li4Fe2TeWO12 (mp-768021) 0.6084 0.083 5
Li4Cr2TeWO12 (mp-775566) 0.7275 0.081 5
Li4Mn2TeWO12 (mp-768044) 0.6886 0.054 5
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1007/s00339-013-7799-8
Thin (7080nm) ITO layers were deposited on Corning glass by DC magnetron sputtering at 230C (ITO-230) and at nominally room temperature (ITO-RT). In the latter case, some unintentional heating up [...]
10.1016/j.apsusc.2008.09.032
The setup for the experimental consists of a furnace system equipped with a proportional integral differential (PID) controller and a horizontal alumina tube. A clean p-type Si substrate is put on the [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition In2O3.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: In_d O
Final Energy/Atom
-5.6249 eV
Corrected Energy
-60.3711 eV
Uncorrected energy = -56.2491 eV Composition-based energy adjustment (-0.687 eV/atom x 6.0 atoms) = -4.1220 eV Corrected energy = -60.3711 eV

Detailed input parameters and outputs for all calculations

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ICSD IDs
  • 16086
  • 24325
  • 187792
Submitted by
User remarks:
  • Indium oxide - II

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)